Manufacturer | Infineon Technologies | |
---|---|---|
Series | HEXFET® | |
Packaging | Tube | |
Part Status | Discontinued at Digi-Key | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V, 20V | |
Rds On (Max) @ Id, Vgs | 12.1 mOhm @ 7.8A, 20V | |
Vgs(th) (Max) @ Id | 2.4V @ 25µA | |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 1270pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SO | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |